US Patent Issued to SAMSUNG ELECTRONICS on Nov. 18 for "Semiconductor device and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,797, issued on Nov. 18, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device and method of fabricating the same" was invented by Ki Hwan Kim (Suwon-si, South Korea), Kyungho Kim (Suwon-si, South Korea), Kang Hun Moon (Suwon-si, South Korea), Choeun Lee (Suwon-si, South Korea) and Yonguk Jeon (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate including an active pattern; a source/drain pattern on the active pattern; a gate electrode on the active pattern; and a gate spacer on the source/drain pattern. The source/drain pattern includes a first semicon...