US Patent Issued to SAMSUNG ELECTRONICS on Nov. 18 for "Method for manufacturing a semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,792, issued on Nov. 18, was assigned to SAMSUNG ELECTRONICS Co. Ltd..

"Method for manufacturing a semiconductor device" was invented by Ho-Jun Kim (Suwon-si, South Korea), Woong Sik Nam (Suwon-si, South Korea) and Mirco Cantoro (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes first and second active patterns, a field insulating film between the first and second active patterns, a first gate structure intersecting the first active pattern and including a first gate electrode and a first gate spacer, a second gate structure intersecting the second active pattern and including a second gate electrode...