US Patent Issued to SAMSUNG ELECTRONICS on Nov. 18 for "Memory device including page buffer circuit and SSD including the memory device, and method of using the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,475,954, issued on Nov. 18, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory device including page buffer circuit and SSD including the memory device, and method of using the same" was invented by Yongsung Cho (Suwon-si, South Korea), Daeseok Byeon (Suwon-si, South Korea) and Minjeong Heo (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell array, and a plurality of page buffer units, the page buffer units each including a sensing node, a data transfer node, a first transistor precharging the data transfer node, a second transistor connecting the sensing node to the dat...