US Patent Issued to SAMSUNG ELECTRONICS on Nov. 18 for "Memory device including asymmetric ground selection lines" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,188, issued on Nov. 18, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory device including asymmetric ground selection lines" was invented by Sung-Min Joe (Seoul, South Korea), Sang Soo Park (Hwaseong-si, South Korea) and Chung-Ho Yu (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a substrate, a first cell string, second cell string, and third cell string, each connected to a first bit line and formed in a direction perpendicular to a top surface of the substrate, a first upper ground selection line connected to the first cell string, a second upper ground selection line s...