US Patent Issued to SAMSUNG ELECTRONICS on Nov. 18 for "Magnetic memory device including capping pattern on non-magnetic pattern" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,956, issued on Nov. 18, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Magnetic memory device including capping pattern on non-magnetic pattern" was invented by Joonmyoung Lee (Gwacheon-si, South Korea), Whankyun Kim (Seoul, South Korea), Eunsun Noh (Yongin-si, South Korea), Heeju Shin (Seoul, South Korea) and Junho Jeong (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory device may include a pinned magnetic pattern and a free magnetic pattern which are stacked on a substrate, a tunnel barrier pattern between the pinned magnetic pattern and the free magnetic pattern, a capping patter...