US Patent Issued to SAMSUNG ELECTRONICS on Nov. 18 for "Apparatus and method estimating breakdown voltage of silicon dioxide film using neural network model" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,474,390, issued on Nov. 18, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Apparatus and method estimating breakdown voltage of silicon dioxide film using neural network model" was invented by Bumsuk Chung (Hwaseong-si, South Korea) and Hakgyun Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of estimating a breakdown voltage of a silicon dioxide film includes; generating breakdown voltage information associated with first test dies selected from among test dies, generating a breakdown voltage estimation model by updating a parameter of a neural network model based on the breakdown voltage inform...