US Patent Issued to SAMSUNG ELECTRONICS on Nov. 11 for "Serial-gate transistor and nonvolatile memory device including the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,563, issued on Nov. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Serial-gate transistor and nonvolatile memory device including the same" was invented by Cheonan Lee (Suwon-si, South Korea), Kiwhan Song (Suwon-si, South Korea), Gyosoo Choo (Suwon-si, South Korea) and Sukkang Sung (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides serial-gate transistors and nonvolatile memory devices including serial-gate transistors. In some embodiments, a nonvolatile memory device includes a plurality of memory blocks, a plurality of pass transistor blocks, and a plurality of gates se...