US Patent Issued to SAMSUNG ELECTRONICS on Nov. 11 for "Semiconductor device including bottom isolation structure for preventing current leakage" (New York, Virginia Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,365, issued on Nov. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Semiconductor device including bottom isolation structure for preventing current leakage" was invented by Keumseok Park (Slingerlands, N.Y.), Edward Namkyu Cho (Albany, N.Y.) and Kang-ill Seo (Springfield, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device which includes: a substrate; a channel structure on the substrate; a source/drain pattern connected to the channel structure; a gate structure on the channel structure; an inner spacer structure comprising an inner spacer between the source/drain pattern and the gate structure, a...