ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,268, issued on Nov. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Semiconductor device and method of manufacturing the same" was invented by Jungoo Kang (Suwon-si, South Korea) and Jinsu Lee (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device. The semiconductor device includes a lower structure; a lower electrode on the lower structure; a dielectric layer on the lower electrode; and an upper electrode on the dielectric layer, wherein the lower electrode includes a bending reducing layer and a dielectric constant-increasing layer between the bending reducing layer...