ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,323, issued on Nov. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device and method of fabricating the same" was invented by Dongsuk Shin (Suwon-si, South Korea), Hyun-Kwan Yu (Suwon-si, South Korea), Sunyoung Lee (Yongin-si, South Korea), Ji Hoon Cha (Seoul, South Korea) and Kyungyeon Hwang (Yongin-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate including an active pattern, a channel pattern on the active pattern and including semiconductor patterns, a source/drain pattern connected to the semiconductor patterns, a gate electrode on the semiconduct...