ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,345, issued on Nov. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor device and method for manufacturing the same" was invented by Edwardnamkyu Cho (Suwon-si, South Korea), Seokhoon Kim (Suwon-si, South Korea), Jungtaek Kim (Suwon-si, South Korea), Pankwi Park (Suwon-si, South Korea), Sumin Yu (Suwon-si, South Korea) and Seojin Jeong (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a semiconductor device, includes forming a plurality of main gate sacrificial patterns spaced apart from each other on a stacked structure of subgate sacrificial patterns and semiconduc...