ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,788, issued on Nov. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device" was invented by Junghoo Shin (Suwon-si, South Korea), Sanghyun Lee (Suwon-si, South Korea), Koungmin Ryu (Suwon-si, South Korea), Jongmin Baek (Suwon-si, South Korea), Kyungyub Jeon (Suwon-si, South Korea) and Kyu-Hee Han (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include PMOSFET and NMOSFET regions spaced apart from each other on a substrate, first and second active patterns provided on the PMOSFET and NMOSFET regions, respectively, a first channel pattern on the first active patt...