US Patent Issued to SAMSUNG ELECTRONICS on Nov. 11 for "Phase-change memory structure and phase-change memory device including the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,292, issued on Nov. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Phase-change memory structure and phase-change memory device including the same" was invented by Changseung Lee (Suwon-si, South Korea), Kiyeon Yang (Suwon-si, South Korea), Youngjae Kang (Suwon-si, South Korea), Hajun Sung (Suwon-si, South Korea) and Dongho Ahn (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A phase-change memory structure includes lower and upper electrodes spaced apart from each other, and a phase-change material stack between the lower and upper electrodes. The phase-change material stack includes a plurality o...