ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,552, issued on Nov. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Gyeonggi-do, South Korea).
"Nonvolatile memory device, operation method of a nonvolatile memory device, and operation method of a controller" was invented by Hyejin Yim (Wonju-si, South Korea), Sung-Won Yun (Suwon-si, South Korea) and Il Han Park (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device including a first substrate, a peripheral circuit provided on the first substrate, a first metal bonding layer provided on the peripheral circuit, a second metal bonding layer directly bonded to the first metal bonding layer, a memory cell array provided...