US Patent Issued to SAMSUNG ELECTRONICS on Nov. 11 for "Method of extracting properties of a layer on a wafer" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,750, issued on Nov. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Method of extracting properties of a layer on a wafer" was invented by Inkeun Baek (Suwon-si, South Korea), Suhwan Park (Suwon-si, South Korea), Ikseon Jeon (Suwon-si, South Korea), Namil Koo (Suwon-si, South Korea), Ingi Kim (Suwon-si, South Korea), Jaeho Kim (Suwon-si, South Korea), Junbum Park (Suwon-si, South Korea) and Sunhong Jun (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method of extracting properties of a layer on a wafer, the method including emitting electromagnetic waves to a lower surface of the wafer, ...