ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,468,459, issued on Nov. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd..
"Memory device and operation method thereof" was invented by YooJin Nam (Suwon-si, South Korea), Woongdai Kang (Seongnam-si, South Korea), Seung-Jun Lee (Hwaseong-si, South Korea) and Dongyeong Choi (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is an operation method of a memory device which performs a self-refresh operation. The method includes receiving a deep-sleep mode enter command from a memory controller, changing a magnitude of an internal voltage of the memory device from a first voltage to a second voltage smaller than the first voltage,...