ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,468,445, issued on Nov. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (South Korea).

"Coordinated in-module RAS features for synchronous DDR compatible memory" was invented by Mu-Tien Chang (Santa Clara, Calif.), Dimin Niu (Sunnyvale, Calif.), Hongzhong Zheng (Los Gatos, Calif.), Sun Young Lim (Gyeonggi-Do, South Korea), Indong Kim (Kyunggi-Do, South Korea) and Jangseok Choi (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory module includes a memory array, an interface and a controller. The memory array includes an array of memory cells and is configured as a dual in-line memory module (DIMM). The DIMM includes a plurality of c...