US Patent Issued to SAMSUNG ELECTRONICS on Nov. 11 for "Capacitor structure, semiconductor memory device including the structure, and method for manufacturing the structure" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,300, issued on Nov. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Capacitor structure, semiconductor memory device including the structure, and method for manufacturing the structure" was invented by Cheol Jin Cho (Suwon-si, South Korea), Young-Lim Park (Suwon-si, South Korea) and Kyoo Ho Jung (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A capacitor structure includes lower and electrodes, and a capacitor dielectric film interposed therebetween. The lower electrode includes a lower electrode film including a first metal element, a first doped oxide film including a second metal element and an oxi...