ALEXANDRIA, Va., June 10 -- United States Patent no. 12,294,357, issued on May 6, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Temperature sensor circuits for integrated circuit devices" was invented by Darryl G. Walker (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include a temperature sensor circuit and core circuitry. The temperature senor circuit may include at least on...