ALEXANDRIA, Va., June 10 -- United States Patent no. 12,293,095, issued on May 6, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Storage device and data access method thereof" was invented by Hao Yan (Xi'an, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A storage device includes: a NAND chip array having a plurality of NAND chips; a ZONE switcher configured to control output of write data to a ZONE cache when a ZONE write command is received; the ZONE cache configured to cache the write data in a cache space corresponding to a ZONE among a plurality of zones; and a ZONE persistence controller configured to control storing, in parallel, the write data in at least two of the plur...