US Patent Issued to SAMSUNG ELECTRONICS on May 6 for "Static random-access memory (SRAM) apparatus and method for reducing wire delay" (Indian Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,293,806, issued on May 6, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-Do, South Korea).

"Static random-access memory (SRAM) apparatus and method for reducing wire delay" was invented by Lava Kumar Pulluru (Bengaluru, India), Gopi Sunanth Kumar Gogineni (Bengaluru, India), Manish Chandra Joshi (Bengaluru, India) and Pushp Khatter (Bengaluru, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various example embodiments of the inventive concepts include a SRAM apparatus including a left memory array and right memory array, each of the left memory array and the right memory array including a left memory array and a right memory array, each com...