ALEXANDRIA, Va., June 10 -- United States Patent no. 12,294,005, issued on May 6, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device having a plurality of channel layers and method of manufacturing the same" was invented by Woo Cheol Shin (Suwon-si, South Korea), Myung Gil Kang (Suwon-si, South Korea), Sadaaki Masuoka (Suwon-si, South Korea), Sang Hoon Lee (Suwon-si, South Korea) and Sung Man Whang (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first semiconductor layer having first and second regions, a plurality of first channel layers spaced apart from each other in a vertical direction on the first region of...