ALEXANDRIA, Va., June 10 -- United States Patent no. 12,293,098, issued on May 6, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Nonvolatile memory device and operation method thereof" was invented by Dongkyo Shim (Seoul, South Korea) and Sang Soo Park (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a nonvolatile memory device which includes a first plane that includes a plurality of memory blocks, a second plane that includes a plurality of memory blocks, an address replacing circuit that receives a first input address from an external controller, the first input address corresponding to a first memory block of the plurality of memory blocks o...