US Patent Issued to SAMSUNG ELECTRONICS on May 6 for "Methods of cutting a fine pattern, methods of forming active patterns using the same, and methods of manufacturing a semiconductor device using the same" (South Korean Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,293,921, issued on May 6, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Methods of cutting a fine pattern, methods of forming active patterns using the same, and methods of manufacturing a semiconductor device using the same" was invented by Sanggyo Chung (Anyang-si, South Korea), Jiseung Lee (Seoul, South Korea), Kyoungha Eom (Yongin-si, South Korea) and Hyunchul Lee (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of cutting a fine pattern, a line structure is formed on a substrate. The line structure extends in a first direction, and includes a pattern and a first mask. The pattern and the first mask...