ALEXANDRIA, Va., June 10 -- United States Patent no. 12,293,923, issued on May 6, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Method of fabricating semiconductor device" was invented by Yangsoo Son (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device includes forming a cut-off region in at least one mandrel line among a plurality of mandrel lines, conformally forming a spacer material layer in the plurality of mandrel lines and a non-mandrel area and forming a cut spacer in the cut-off region and depositing a gap-fill material such that a cut block is formed on a portion of the non-mandrel area and a concave port...