ALEXANDRIA, Va., June 10 -- United States Patent no. 12,293,801, issued on May 6, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Memory interface and semiconductor memory device and semiconductor device including the same" was invented by Hojun Yoon (Suwon-si, South Korea), Youngdon Choi (Suwon-si, South Korea), Seungjin Park (Suwon-si, South Korea), Seunghoon Lee (Suwon-si, South Korea) and Junghwan Choi (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device has a memory controller configured to provide a data strobe signal, and a memory device configured to receive a data signal provided from the memory controller or output a data signal to the ...