ALEXANDRIA, Va., June 10 -- United States Patent no. 12,295,136, issued on May 6, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Integrated circuit semiconductor device" was invented by Intak Jeon (Seoul, South Korea), Hyukwoo Kwon (Seoul, South Korea) and Hanjin Lim (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit semiconductor device includes a lower electrode formed on a substrate extending in a first direction and a second direction perpendicular to the first direction and a support structure supporting the lower electrode. The support structure includes a support pattern surrounding the lower electrode, extending in the first direction and ...