US Patent Issued to SAMSUNG ELECTRONICS on May 27 for "Three-dimensional semiconductor memory device including separation structures and sacrificial layers and electronic system including the same" (South Korean Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,816, issued on May 27, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Three-dimensional semiconductor memory device including separation structures and sacrificial layers and electronic system including the same" was invented by Haemin Lee (Seoul, South Korea), Byoung-Taek Kim (Seongnam-si, South Korea) and Hyeonjoo Song (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are three-dimensional (3D) semiconductor memory devices and electronic system including the same. The 3D semiconductor memory device may include a substrate including first and second regions, a stack structure including int...