US Patent Issued to SAMSUNG ELECTRONICS on May 27 for "Three-dimensional memory device and method of making thereof using sacrificial carbon-containing barrier film" (South Korean Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,763, issued on May 27, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Three-dimensional memory device and method of making thereof using sacrificial carbon-containing barrier film" was invented by Younghoon Goo (Busan, South Korea), Dongyoung Kim (Pohang-si, South Korea) and Kyungtae Jang (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "To manufacture a semiconductor device, a structure is formed by alternately stacking a plurality of first films and a plurality of second films one-by-one on a substrate. A vertical hole is formed to vertically pass through the structure. A carbon-containing barrier film is f...