US Patent Issued to SAMSUNG ELECTRONICS on May 27 for "Semiconductor memory device including vertical cell structure and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,504, issued on May 27, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor memory device including vertical cell structure and method of fabricating the same" was invented by Hyuncheol Kim (Seoul, South Korea), Yongseok Kim (Suwon-si, South Korea), Dongsoo Woo (Seoul, South Korea), Sungwon Yoo (Hwaseong-si, South Korea), Kyunghwan Lee (Seoul, South Korea) and Jaeho Hong (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device may include a stack including word lines and interlayer insulating patterns alternatingly stacked on a substrate, the word lines being extended in a...