ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,792, issued on May 27, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Semiconductor device" was invented by Jongmin Baek (Seoul, South Korea), Junghoo Shin (Seoul, South Korea), Sangshin Jang (Seoul, South Korea), Junghwan Chun (Anyang-si, South Korea), Kyeongbeom Park (Suwon-si, South Korea) and Suhyun Bark (Seongnam-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate having an active region, a first insulating layer on the substrate, a second insulating layer on the first insulating layer, an etch stop layer between the first insulating layer and the second insulatin...