US Patent Issued to Samsung Electronics on May 27 for "Memristor element with a magnetic domain wall in a magnetic free layer moved by spin orbit torque, synapse element and neuromorphic processor including the same" (South Korean Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,542, issued on May 27, was assigned to Samsung Electronics Co. Ltd (Gyeonggi-do, South Korea).

"Memristor element with a magnetic domain wall in a magnetic free layer moved by spin orbit torque, synapse element and neuromorphic processor including the same" was invented by Jeong-Heon Park (Hwaseong-si, South Korea) and Ung Hwan Pi (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a memristor element, a synapse element and a neuromorphic processor including the same. The memristor element includes a free layer including a domain wall; and a fixed layer including a material of which a magnetization direction is fix...