ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,089, issued on May 20, was assigned to SAMSUNG ELECTRONICS Co. LTD. (South Korea).
"Semiconductor memory devices" was invented by Jongcheol Kim (Suwon-si, South Korea), Hyunsung Shin (Suwon-si, South Korea), Hohyun Shin (Suwon-si, South Korea), Taeyoung Oh (Suwon-si, South Korea) and Kyungsoo Ha (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a memory cell array, a data input/output (I/O) buffer, an I/O gating circuit and a control logic circuit. The memory cell array includes a plurality of sub array blocks arranged in a first direction and a second direction. The data I/O buffer exchange...