ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,026, issued on May 20, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).
"Semiconductor memory device and method of fabricating the same" was invented by Hyo Joon Ryu (Hwaseong-si, South Korea), Young Hwan Son (Hwaseong-si, South Korea), Seo-Goo Kang (Seoul, South Korea), Jung Hoon Jun (Hwaseong-si, South Korea), Kohji Kanamori (Seongnam-si, South Korea) and Jee Hoon Han (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory includes metallic lines on a substrate and including an uppermost metallic line, a semiconductor conduction line on the uppermost metallic line, a vertical structure penetrating...