US Patent Issued to SAMSUNG ELECTRONICS on May 20 for "Semiconductor device measurement method using x-ray scattering and semiconductor device manufacturing method including the measurement method" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,303,307, issued on May 20, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device measurement method using x-ray scattering and semiconductor device manufacturing method including the measurement method" was invented by Jaeyong Lee (Suwon-si, South Korea), Hidong Kwak (Suwon-si, South Korea), Minjung Shin (Suwon-si, South Korea), Seungryeol Oh (Suwon-si, South Korea), Chuhee Lee (Suwon-si, South Korea) and Byunghyun Hwang (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device measurement method using X-ray scattering includes preparing a semiconductor device including a repeat st...