ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,055, issued on May 20, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device and method of fabricating the same" was invented by Kyungin Choi (Seoul, South Korea), Dongmyoung Kim (Suwon-si, South Korea), Haejun Yu (Osan-si, South Korea), Ki-Hyung Ko (Suwon-si, South Korea), Jiho Yoo (Seongnam-si, South Korea) and Soonwook Jung (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an active pattern provided on a substrate, a source/drain pattern provided on the active pattern, a channel pattern configured to be connected to the source/drain pattern, a gate electr...