US Patent Issued to SAMSUNG ELECTRONICS on May 20 for "Nonvolatile memory device with openings in the substrate and nonvolatile memory system including the same" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,367, issued on May 20, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Nonvolatile memory device with openings in the substrate and nonvolatile memory system including the same" was invented by Kyung Min Ko (Seoul, South Korea), Myung Hun Lee (Seongnam-si, South Korea), Pan Suk Kwak (Goyang-si, South Korea) and Dae Seok Byeon (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nonvolatile memory device includes a peripheral logic structure including a peripheral circuit on a substrate, a horizontal semiconductor layer extending along an upper surface of the peripheral logic structure, stacked structures ...