US Patent Issued to SAMSUNG ELECTRONICS on May 20 for "Magnetic tunneling junction device and memory device including the same" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,250, issued on May 20, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Magnetic tunneling junction device and memory device including the same" was invented by Kwangseok Kim (Seoul, South Korea), Kiwoong Kim (Hwaseong-si, South Korea), Jeongchun Ryu (Hwaseong-si, South Korea) and Seonggeon Park (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a magnetic tunneling junction device having a relatively high tunneling magnetoresistance (TMR) ratio; and a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes: a pinned layer having a fir...