US Patent Issued to SAMSUNG ELECTRONICS on May 20 for "Integrated circuit devices including vertically stacked field effect transistors" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,075, issued on May 20, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Integrated circuit devices including vertically stacked field effect transistors" was invented by Dohee Kim (Seoul, South Korea), Sunguk Jang (Hwaseong-si, South Korea), Bongjin Kuh (Suwon-si, South Korea), Kongsoo Lee (Hwaseong-si, South Korea) and Sahwan Hong (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes: an active region extending in a first horizontal direction on a substrate; a first transistor at a first vertical level on the active region, the first transistor including a first source/drai...