US Patent Issued to SAMSUNG ELECTRONICS on May 20 for "Integrated circuit devices including stacked transistors and methods of forming the same" (New York, Virginia Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,062, issued on May 20, was assigned to SAMSUNG ELECTRONICS Co. LTD. (South Korea).

"Integrated circuit devices including stacked transistors and methods of forming the same" was invented by Jeonghyuk Yim (Halfmoon, N.Y.) and Kang-Ill Seo (Springfield, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Integrated circuit devices may include a stacked structure including an upper transistor on a substrate and a lower transistor between the substrate and the upper transistor. The upper transistor may include an upper gate electrode, an upper active region in the upper gate electrode, and an upper gate insulator between the upper gate electrode and the ...