US Patent Issued to SAMSUNG ELECTRONICS on May 20 for "Devices including stacked nanosheet transistors" (New York, Virginia Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,106, issued on May 20, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Devices including stacked nanosheet transistors" was invented by Byounghak Hong (Albany, N.Y.), Seunghyun Song (Albany, N.Y.), Ki-Il Kim (Clifton Park, N.Y.), Gunho Jo (Clifton Park, N.Y.) and Kang-Ill Seo (Springfield, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Nanosheet transistor devices are provided. A nanosheet transistor device includes a transistor stack that includes a lower nanosheet transistor having a first nanosheet width and a lower gate width. The transistor stack also includes an upper nanosheet transistor that is on the lower nanoshe...