US Patent Issued to SAMSUNG ELECTRONICS on May 13 for "Semiconductor memory device including capacitor with a dielectric film on an upper plate region, a lower plate region, and a side surface of a connecting region therebetween" (South Korean Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,550, issued on May 13, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor memory device including capacitor with a dielectric film on an upper plate region, a lower plate region, and a side surface of a connecting region therebetween" was invented by Seung Jae Jung (Suwon-si, South Korea), Jae Hoon Kim (Seoul, South Korea), Kwang-Ho Park (Cheonan-si, South Korea) and Yong-Hoon Son (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a bit line extending in a first direction, a gate electrode extending in a second direction, and a semiconductor pattern extending in...