ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,551, issued on May 13, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor memory device and method of fabricating the same" was invented by Kiseok Lee (Hwaseong-si, South Korea) and Keunnam Kim (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device including a stack including layer groups vertically stacked on a substrate, each of the layer groups including a word line, a lower channel layer, an upper channel layer, and a data storing element electrically connected to the lower channel layer and the upper channel layer; and a bit line at a side of the stack, the bit line...