ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,751, issued on May 13, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device" was invented by Junggil Yang (Hwaseong-si, South Korea), Seungmin Song (Hwaseong-si, South Korea), Geumjong Bae (Suwon-si, South Korea) and Dong Il Bae (Seongnam-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a channel pattern including a first semiconductor pattern and a second semiconductor pattern, which are sequentially stacked on a substrate, and a gate electrode that extends in a first direction and crosses the channel pattern. The gate electrode includes a first portion interposed ...