US Patent Issued to SAMSUNG ELECTRONICS on May 13 for "Semiconductor device, method of manufacturing the same, and massive data storage system including the same" (South Korean Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,561, issued on May 13, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device, method of manufacturing the same, and massive data storage system including the same" was invented by Minjun Kang (Hwaseong-si, South Korea), Byunggon Park (Seoul, South Korea) and Joongshik Shin (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a gate electrode structure on a substrate and including gate electrodes spaced apart from each other in a first direction, each gate electrode extending in a second direction; a memory channel structure extending through the gate electrode s...