ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,334, issued on May 13, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Non-volatile memory device and method for programming a non-volatile memory device" was invented by Junyong Park (Seoul, South Korea), Hyunggon Kim (Hwaseong-si, South Korea), Byungsoo Kim (Yongin-si, South Korea) and Sungmin Joe (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for programming at least one memory cell of a plurality of memory cells included in a non-volatile memory device, the at least one memory cell including a word line and a bit line, the method including: performing a first and second program and verify opera...