ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,578, issued on May 13, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Non-volatile memory device" was invented by Moorym Choi (Yongin-si, South Korea), Jungtae Sung (Seoul, South Korea) and Yunsun Jang (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes first and second substrates including cell and peripheral circuit regions, first and second gate electrode structures, first and second channels, and first to third transistors. The first and second gate electrode structures include first and second gate electrodes in a vertical direction. The first and second channel extend throu...