US Patent Issued to SAMSUNG ELECTRONICS on May 13 for "Method for forming a three-dimensional semiconductor memory device with an improved etching step" (South Korean Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,579, issued on May 13, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Method for forming a three-dimensional semiconductor memory device with an improved etching step" was invented by Yong-Hoon Son (Yongin-si, South Korea), Jae Hoon Kim (Seoul, South Korea), Kwang-ho Park (Cheonan-si, South Korea), Hyunji Song (Anyang-si, South Korea), Gyeonghee Lee (Hwaseong-si, South Korea) and Seungjae Jung (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device is disclosed. The device includes a peripheral circuit structure on a substrate, a semiconductor layer on the peripheral circuit stru...