US Patent Issued to SAMSUNG ELECTRONICS on May 13 for "Memory device including vertical channel structure" (South Korean Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,329, issued on May 13, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Memory device including vertical channel structure" was invented by Yongsung Cho (Hwaseong-si, South Korea), Minjae Seo (Hwaseong-si, South Korea), Kyoman Kang (Gunpo-si, South Korea) and Byungsoo Kim (Anyang-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a memory device with a vertical channel structure. The memory device includes a memory cell array including a plurality of memory cells and a plurality of string selection lines, a negative charge pump configured to generate a bias voltage of a negative level, to be applied t...