ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,575, issued on May 13, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Memory device" was invented by Kyongsik Yeom (Suwon-si, South Korea), Changmin Jeon (Yongin-si, South Korea) and Yongkyu Lee (Gwacheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first bit line configured to supply a first bit line bias voltage, a memory cell transistor having a first operating voltage, a selection transistor having a second operating voltage and configured to control the supply of the first bit line bias voltage to a source of the memory cell transistor, and a second bit line connected to a dra...